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Precision Engineering
Building the tools that make nanoscience possible.
Zone plates
Diffractive lenses for a new generation of x-ray beamlines.
Interferometry
Wavefront control with
sub-angstrom sensitivity
Optical Coatings
Precision optical coatings for soft
x-ray and EUV applications worldwide.
EUV Lithography
The world's highest resolution projection lithograph tool.
EUV Mask Imaging
The world's highest performance
EUV mask inspection tool.
Reflectometry
The world standard for EUV and
x-ray reflectance measurements.
Holography
Systematically controlling spatial
and temporal coherence in short wavelength optical systems.
Education
Inspiring and preparing the next generation of scientists, engineers,
and educators.
Nanomagnetism
High resolution imaging of nanoscale magnetic stcutrures.
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The Center for X-Ray Optics at Lawrence Berkeley National Laboratory works to further science and technology using short wavelength optical systems and techniques. We create and operate advanced experimental systems to address national needs, support research in material, life, and environmental science, and extend the forefront of semiconductor manufacturing.
Tailoring Magnetic Skyrmions for Next-Generation Memory
Magnetic skyrmions are nanoscale topological spin structures offering great promise for next-generation memory technologies. However, translating their promise into viable technology requires the ability to modulate skyrmion properties, and their electrical detection under ambient conditions. Partnering with researchers in Singapore we have successfully demonstrated and visualized the control of magnetic properties of skyrmions at room temperature. This was achieved by developing a novel CMOS-compatible thin film material platform enabling the bottom-up control of skyrmion properties. The visualization was achieved by the direct imaging of skyrmions using the CXRO soft x-ray microscope at ALS (BL6.1.2, XM-1). The results demonstrated the ability to modulate the size, density, and stability of skyrmions by varying the thickness of constituent layers - all while using semiconductor industry-compatible fabrication techniques. In conjunction, the world-first electrical detection (Hall effect) of ambient skyrmions was also demonstrated. This breakthrough development provides a stepping stone for realizing stable and highly scalable (10 nm and below) non-volatile memory.
Ref: A. Soumyanarayanan, M. Raju, A. L. Gonzalez Oyarce, Anthony K. C. Tan, Mi-Young Im, A. P. Petrovic, Pin Ho, K. H. Khoo, M. Tran, C. K. Gan, F. Ernult and C. Panagopoulos, Nature Materials, DOI: 10.1038/NMAT4934 (2017).
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